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| Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 4.50.1 1.60.2 Unit: mm 1.50.1 2.60.1 0.4max. s Features q q q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25C) Ratings 25 20 12 1 0.5 * 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 marking 1 150 -55 ~ +150 EIAJ:SC-62 Mini Power Type Package Marking symbol : IK Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 *3R on Conditions VCB = 25V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f= 1MHz min typ max 1 Unit A V V V 25 20 12 200 60 0.13 0.4 1.2 200 10 1.0 *2 800 MHz pF Pulse measurement *1h FE1 Rank classification Rank hFE1 R 200 ~ 350 IKR S 300 ~ 500 IKS T 400 ~ 800 IKT Measurement circuit 1k IB=1mA f=1kHz V=0.3V VB VV VA Marking Symbol VB Ron= !1000() VA-VB 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.4 2SD2210 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 1.2 IB=4.0mA 1.0 Ta=25C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=25 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 1200 VCE=2V 400 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 1000 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 350 300 250 200 150 100 50 800 Ta=75C 600 25C -25C 400 25C 200 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 24 Ron -- IB IE=0 Ta=25C f=1MHz 1000 300 Ron measuring circuit IB=1mA Collector output capacitance Cob (pF) 20 ON resistance Ron () 100 30 10 3 1 0.3 VB V VA 16 f=1kHz V=0.3V 12 8 4 0 1 3 10 30 100 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector to base voltage VCB (V) Base current IB (mA) 2 |
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